Plessey to accelerate gallium nitride-on-silicon lighting technology

摘要

Plessey Semiconductors will be leading a ￡1.3-million UK government-funded project to accelerate the high-volume manufacture of its gallium nitride (GaN)-on-silicon light-emitting diodes (LEDs). The project will be undertaken in conjunction with Aixtron Ltd and Broker Nano Surfaces Division at Plessey's manufacturing site in Plymouth, UK.