A gallium nitride-on-silicon structure is disclosed wherein the two-dimensional electron gas (2DEG) layer is a discontinuous layer comprising at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer may be depleted by a p-doped gallium nitride layer disposed over a portion of the aluminum gallium nitride layer. Additionally or alternatively, trenches can be formed in the structure through the 2DEG layer to create a gap in the 2DEG layer. The electrical component is positioned over at least a portion of the gap.
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