We demonstrated the growth of blue LED structures grown on 4-inch and 8-inch Si (111) substrates. GaN layers that have low threading dislocation density (TDD) of 1.6×108/cm2, which is comparable to state of the art in GaN on sapphire, can be obtained on 4-inch Si substrate by using a new TDD reduction technology using a silicon nitride (SiN) interlayer. A dependence of LED device performance on threading dislocation density was studied by using 4-inch Si substrate. A LED manufacturing technology has been developed by using 8-inch Si towards mass production technology. The light output power representing a median performance exceeded 641 mW at 350 mA, which was comparable to state-of-the-art LED.
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机译：我们展示了在4英寸和8英寸Si（111）衬底上生长的蓝色LED结构的生长。可以获得具有1.6×10 8 / cm 2 的低穿线位错密度（TDD）的GaN层，可与蓝宝石GaN中的现有技术相媲美通过使用氮化硅（SiN）中间层的新型TDD还原技术在4英寸Si基板上进行蚀刻。通过使用4英寸Si基板研究了LED器件性能对螺纹位错密度的依赖性。通过将8英寸Si应用于批量生产技术，已经开发了LED制造技术。代表中位性能的光输出功率在350 mA时超过641 mW，这可与最新的LED相媲美。
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