GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

摘要

We report on the growth of fully relaxed and smooth GaSb layers with reduced density of threading dislocations, deposited on GaAs substrate. We prove that three parameters have to be controlled in order to obtain applicable GaSb buffers with atomically smooth surface: interfacial misfit (IMF), the etch pit density (EPD) and the growth mode.