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Effects of Very Low Growth Rates on GaAs Grown by Molecular Beam Epitaxy at Low Substrate Temperatures.

机译：极低生长速率对低衬底温度下分子束外延生长Gaas的影响。

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作者
Metze, G. M.; Calawa, A. R.;
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年度 1983
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Gallium arsenides; Epitaxial growth; Molecular beams; Substrates; Crystal growth; Rates; Temperature; Reprints; Molecular beam eptiaxy;

机译：砷化镓;外延生长;分子束;基板;晶体生长;速率;温度;重印;分子束eptiaxy;

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专利

1. Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition [J] . Tomoya Takahashi, Takuya Mukai, Ken Morita, Japanese journal of applied physics . 2009,第4issue2期

机译：在慢速生长条件下分子束外延在（001）和（113）B GaAs衬底上生长的自组装InAs量子点的光致发光特性
2. Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy [J] . R. Zhang, S.F. Yoon, K.H. Tan, Journal of Crystal Growth . 2003,第1a4期

机译：四溴化碳通量，衬底温度和生长速率对分子束外延生长碳掺杂GaAs的影响
3. Low threshold current GaAs/AlGaAs GRIN-SCH lasers grown by molecular beam epitaxy on Si/sub 3/N/sub 4/ masked substrates [J] . Meier H.P., Van Gieson E. Electronics Letters . 1988,第18期

机译：通过分子束外延在Si / sub 3 / N / sub 4 /掩模基板上生长的低阈值电流GaAs / AlGaAs GRIN-SCH激光器
4. Growth and characterization of (Zn, Sn, Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy [C] . Hideyuki Toyota, Tatsuya Terauchi, Shiro Hidaka, 2016 Compound Semiconductor Week Includes 28th International Conference on Indium Phosphide amp; Related Materials amp; 43rd International Symposium on Compound Semiconductors . 2016

机译：GaAs（001）衬底上生长的（Zn，Sn，Ga）As2薄膜的分子束外延生长和表征
5. Gallium arsenide grown by two molecular beam epitaxy techniques at reduced substrate temperatures. [D] . Zhang, Kai. 1993

机译：砷化镓通过两种分子束外延技术在降低的底物温度下生长。
6. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy [O] . D. Benyahia, Ł. Kubiszyn, K. Michalczewski, 2018

机译：GaAs衬底上分子束外延生长的中波和长波InAs / GaSb超晶格的电学性质
7. In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy [O] . Florian Chaumeton, Sébastien Gauthier, David Martrou 2015

机译：使用氨分子束外延在4H-siC（0001）和si（111）衬底上以低生长速率生长的高质量alN（0001）层的原位NC-aFm测量
8. Effects of Very Low Growth Rates on GaAs Grown by Molecular Beam Epitaxy at Low Substrate Temperatures [R] . Metze, G. M., Calawa, A. R. 1983

机译：极低生长速率对低衬底温度下分子束外延生长Gaas的影响

Effects of Very Low Growth Rates on GaAs Grown by Molecular Beam Epitaxy at Low Substrate Temperatures.

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