Crystal Growth of Nonpolar m-Plane ZnO on a Lattice-Matched (100) gamma-LiAlO2 Substrate

摘要

In this study, a nearly lattice-matched (100) gamma-LiAlO2 single crystal was demonstrated as a potential substrate for the epitaxial growth of nonpolar ZnO materials. The adopted growth approach is a simple chemical vapor deposition (CVD) method. The orientation was identified as the [10-10] orientation (m-plane) by the X-ray diffraction pattern. Characterization Of further structures and the defects of nonpolar ZnO films were performed by field emission transmission electron microscopy (FETEM). Roorn-temperature photoluminescence spectra of nonpolar ZnO showed a strong UV emission peak at around 377 nm and a negligible green band emission. The dependence of growth characteristics on the growth temperatures, deposition time, and chamber pressure were investigated.