Epitaxial growth of nonpolar m-plane ZnO (10-10) on large-size LiGaO_2 (100) substrates

摘要

Nonpolar m-plane ZnO epitaxial film with [10-10] orientation was successfully grown on a large-size (100) LiGaO_2 single crystal substrate by chemical vapor deposition method. The dependence of growth characteristics on the different growth conditions was investigated. Following CVD growth, the surface morphologies and epi-film crystallinity were examined by scanning electron microscopy and X-ray diffraction. Room-temperature photoluminescence spectra exhibit a strong near-band-edge emission peak at 377 nm with a negligible green band. Raman spectroscopy showed that the as-grown (10-10) ZnO epilayer on (100) LiGaO_2 are under compressive stress. Further structural characterization and defect analysis of nonpolar ZnO material was performed using transmission electron microscopy.