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Rapid synthesis of nc-Si/a-SiNx:H QD thin films by plasma processing for their cost effective applications in photonic and photovoltaic devices

机译:快速合成NC-Si / A-SINX:H QD薄膜通过等离子体加工在光子和光伏器件中的成本效益应用

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摘要

A rapid and single step synthesis of nc-Si/a-SiNx:H QD thin films, where nc-Si QDs of size similar to 9-2.6 nm and number density similar to 10(11)-10(12) cm(-2) are embedded in a-SiNx:H matrix, has been made possible from a (SiH4 + NH3) gas mixture, with the advent of high density low pressure planar inductively coupled plasma processing. The nc-Si/a-SiNx:H QD films of high crystallinity (similar to 80%) with preferred orientation /(< 220 >)//(< 111 >) similar to 1, along with the distinct presence of alpha-Si3N4 and beta-Si3N4 components have been obtained at a competitive deposition rate of similar to 20.6 nm min(-1) from an extremely low flow rate (similar to 2.0 sccm) of the feed gas SiH4. The significance of the result lies in attaining such a material from pure SiH4 plasma without H-2-dilution, and that even at a low substrate temperature (similar to 250 degrees C) compatible for device fabrication. Tunable and intense visible photoluminescence (PL), with a variety of individual colors in the range 1.55-3.10 eV, has been demonstrated as a consequence of band-to-band recombination due to quantum confinement effects (QCE). The high magnitude of the confinement parameter (similar to 13.5 eV nm(2)) has been correlated to the core-shell-like structure of the QDs within a dielectric matrix; the amorphous shell-like component surrounding the rigid network of the nc-Si QD core has been revealed by the HR-TEM micrograph. With all their various properties e.g., high crystallinity, favored orientation, wide optical gap due to the quantum confinement in the Si-ncs and a significant amount of nitrogen bonding in the matrix, as well as their photoluminescence, which is tunable over a wide range, the nc-Si/a-SiNx:H quantum dot (QD) thin films obtained at high growth rate have enormous promise for their cost effective applications in silicon based photonic and photovoltaic devices.
机译:快速和单步合成NC-Si / A-SINX:H QD薄膜,其中尺寸的NC-SiQDS QDS的尺寸类似于9-2.6nm和类似于10(11)-10(12)cm的数密度( - - 2)嵌入A-SINX:H矩阵,已经从A(SIH4 + NH3)气体混合物中进行了可能,具有高密度低压平面的出现电感耦合等离子体处理。 NC-Si / A-SINX:H QD薄膜的高结晶度(类似于80%),其优选取向/(<220>)//(<111>)类似于1,随着α-Si3N4的明显存在已经以类似于20.6nm min(-1)的竞争性沉积速率,从进料气体SiH4的极低流速(类似于2.0 sccm)的竞争性沉积速率以竞争性沉积速率获得的β-Si3N4组分。结果的重要性在于在没有H-2稀释的情况下从纯SIH4等离子体中获得这种材料,即使在与装置制造相容的低衬底温度(类似于250℃)。可调谐且强烈的可见光致发光(PL),在1.55-3.10eV的范围内,由于量子限制效应(QCE)引起的带状带重组,已经证明了各种各种颜色。限制参数的高幅度(类似于13.5eV NM(2))与介电矩阵内QD的核壳状结构相关联;围绕NC-Si QD核心刚性网络的非晶壳状部件已经被HR-TEM显微照片透露。通过各种性质,例如,高结晶度,有利的取向,由于Si-NC的量子限制和基质中大量的氮气键,以及它们的光致发光而在宽范围内可调,在高生长速率下获得的NC-Si / A-SINX:H量子点(QD)薄膜具有巨大的希望,在基于硅的光子和光伏器件中具有巨大的经济性应用。

著录项

  • 来源
    《RSC Advances》 |2015年第78期|共8页
  • 作者

    Das Debajyoti; Sain Basudeb;

  • 作者单位

    Indian Assoc Cultivat Sci Energy Res Unit Nanosci Grp Kolkata 700032 India;

    Indian Assoc Cultivat Sci Energy Res Unit Nanosci Grp Kolkata 700032 India;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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