Tunable transport characteristics of armchair phosphorene nanoribbon-based three-terminal devices by the channel length and gate dielectrics

摘要

The effects on the transport characteristics of the channel length and gate dielectrics in a type of armchair phosphorene nanoribbon-based three-terminal device are investigated using the density functional theory. The simulation results show that not only the variation of gate voltage, but also the channel length and gate dielectrics can effective modulate the transport properties of the three-terminal devices. Meanwhile, the robust negative differential resistance behavior rises in the scale from 3 nm to 9 nm devices with SiO2, Al2O3, HfO2 gate dielectrics. The current peak-to-valley ratio ascends with the channel length due to the existence of short-channel effect, but descends with the gate dielectric constant because of the increased ability to suppress the current. This finding suggests a possible route to manipulate the current-voltage characteristics of a type of three-terminal device, which is expected to have great potential application in logic, high-frequency nanodevices.