Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths

摘要

We have investigated for the first time the effect of stressed contact liners on the performance of fully depleted ultra-thin channel CMOS devices with a raised source/drain. Significant enhancement in mobility and drive current is observed in both nFETs and pFETs. The observed enhancement shows a strong dependence on the Si channel thickness and the height of the raised source/drain, consistent with stress simulations.