机译:限制诱导非晶硅碳化硅薄膜组成比的变化及光学性质的影响
Indian Inst Technol Indore Discipline Met Engn &
Mat Sci Indore 453552 India;
Indian Inst Technol Indore Discipline Phys Indore 453552 India;
Indian Inst Technol Indore Discipline Met Engn &
Mat Sci Indore 453552 India;
Indian Inst Technol Indore Discipline Biosci &
Biomed Engn Indore 453552 India;
Bhabha Atom Res Ctr Atom &
Mol Phys Div Mumbai 400085 Maharashtra India;
UGC DAE Consortium Sci Res Indore 452001 India;
Indian Inst Technol Indore Discipline Met Engn &
Mat Sci Indore 453552 India;
Amorphous silicon carbide (SiC) thin-films; Composition ratio; X-ray photoelectron spectroscopy (XPS); Band gap; Dual ion beam sputtering (DIBS) deposition;
机译:限制诱导非晶硅碳化硅薄膜组成比的变化及光学性质的影响
机译:氢化非晶碳化硅薄膜的RF-PECVD沉积和光学性质
机译:Ag辅助光化学刻蚀形成的薄膜多孔非晶碳化硅的结构和光学性质
机译:用电子回旋谐振等离子体化学气相沉积制备氢化非晶碳化硅膜微观结构和光学性能的影响
机译:通过聚合物源化学气相沉积合成的非晶碳化硅和碳氮化硅薄膜的表征。机械结构和金属界面性能
机译:组成对非晶GaxSe100-x纳米棒薄膜电学和光学性能的影响
机译:自然和光致缺陷对氢化非晶硅锗(a-SiGe:H)合金薄膜的光学和电子性能的影响
机译:非晶氢化氮化硅薄膜中的光诱导氮悬挂键。