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首页> 外文期刊>Journal of Materials Processing Technology >Study on new method and mechanism of microcutting-etching of microlens array on 6H-SiC mold by combining single point diamond turning with ion beam etching
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Study on new method and mechanism of microcutting-etching of microlens array on 6H-SiC mold by combining single point diamond turning with ion beam etching

机译:用离子束蚀刻结合单点金刚石蚀刻微型蚀刻微塑料蚀刻微塑料蚀刻的新方法及机理

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摘要

Silicon carbide (SiC) is a kind of ideal mold material for precision glass molding (PGM). However, for the traditional processing methods, the fabrication of large-area and high-accuracy microlens arrays on SiC is still faced with many difficulties because of its high brittleness and rigidity. Therefore, an integrated microcutting-etching method, which combines single point diamond turning (SPDT) with ion beam etching (IBE), is proposed and explored within this paper. This new method aims to provide a solution for the microlens machining on the hard or brittle materials. In order to improve the microlens accuracy, we investigated the microlens profile evolution mechanism on the 6H-SiC mold during IBE process and established a reverse model to design the mask shape for SPDT. The microcutting-etching machining for the fabrication of microlens array was conducted on both Si and SiC substrates. Three groups of the ring-shaped microlens arrays with different sizes were obtained on Si and SiC substrates, respectively. The experiment results show the validity of the profile evolution mechanism and the feasibility of the reverse design model. The microcutting-etching method is proved to have prospective potentials in the fabrication of microstructures on the hard or brittle materials.
机译:碳化硅(SIC)是一种精密玻璃模塑(PGM)的理想模具材料。然而,对于传统的加工方法,大面积和高精度微透镜阵列的制造仍然面临着许多困难,因为其高脆性和刚性。因此,在本文中提出并探索了一种与离子束蚀刻(IBE)结合单点金刚石转动(SPDT)的集成微密密化蚀刻方法。这种新方法旨在为硬质或脆性材料提供微透镜加工的解决方案。为了提高微透镜精度,我们在IBE过程中调查了在6H-SIC模具上的微透镜型材展开机制,并建立了逆模型来设计SPDT的掩模形状。在Si和SiC基板上进行用于制造微透镜阵列的微加工蚀刻加工。在Si和SiC基板上分别获得三组具有不同尺寸的环形微透镜阵列。实验结果表明了轮廓演化机制的有效性和反向设计模型的可行性。证明微包蚀刻方法具有在硬质或脆性材料上制造微结构的前瞻性电位。

著录项

  • 来源
  • 作者单位

    Beijing Inst Technol Key Lab Fundamental Sci Adv Machining 5 Zhongguancun South St Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Mech Engn 5 Zhongguancun South St Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Mech Engn 5 Zhongguancun South St Beijing 100081 Peoples R China;

    Beijing Inst Technol Sch Mech Engn 5 Zhongguancun South St Beijing 100081 Peoples R China;

    Beijing Inst Technol Key Lab Fundamental Sci Adv Machining 5 Zhongguancun South St Beijing 100081 Peoples R China;

    Beijing Inst Technol Key Lab Fundamental Sci Adv Machining 5 Zhongguancun South St Beijing 100081 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 一般性问题;工程材料学;
  • 关键词

    SPDT; IBE; SiC; Mold; Microlens array;

    机译:SPDT;IBE;SIC;模具;微透镜阵列;

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