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Reliable single-phase micro-joints with high melting point for 3D TSV chip stacking

机译:具有高熔点的可靠单相微关节,用于3D TSV芯片堆叠

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摘要

As micro solder-joints downsize to less than 10 um in 3-dimensional (3D) TSV (Through Silicon Via) chip stacking, rapidly fabricating reliable micro-joints without collapse in chip stacking is regarded as a critical issue. A practicable method with a suitable temperature gradient (TG) and Ni/Sn(10 mu m)/Ni interconnection structure was developed compared with conventional transient liquid phase (TLP) bonding. Using this method, the micro-joint fully composed of Ni3Sn4 intermetallic was fabricated within 17 min bonding time. It is nearly three times faster than that under conventional TLP bonding, which may overcome this technology limitation caused by longer bonding times. This fast TG-TLP method provided an asymmetry growth characteristic with thicker Ni3Sn4 at the cold end and thinner Ni3Sn4 at the hot end. The basic micro-joint formation mechanisms were suggested and experimentally verified. Furthermore, the properties of the fabricated Ni3Sn4 micro-joint were evaluated in this study. The results demonstrated its desirable features such as high melting temperature, stable single-phase constitution, stronger mechanical strength and low thermal resistance. Finally, the collapsed micro solder-joint issue was completely solved resulting in higher reliability. (C) 2020 Elsevier B.V. All rights reserved.
机译:作为微焊点在三维(3D)TSV(通过硅通孔)芯片堆叠中缩小到小于10μm,在没有碎片堆叠坍塌的快速制造可靠的微关节被认为是一个关键问题。与常规瞬态液相(TLP)粘合相比,开发了具有合适温度梯度(TG)和Ni / Sn(10μM)/ Ni互连结构的可行方法。使用该方法,在17分钟的键合时间内制造完全由Ni3SN4金属间金属间组成的微关节。它比传统TLP键合的速度快三倍,这可能会克服粘接时间较长的这种技术限制。该快速TG-TLP方法提供了不对称的生长特性,在冷端处具有较厚的Ni3Sn4,并在热端较薄Ni3SN4。建议和实验验证基本的微关节形成机制。此外,在该研究中评估了制造的Ni3SN4微关节的性质。结果证明了其理想的特征,如高熔点,单相体积稳定,机械强度较强,耐热性低。最后,倒塌的微焊接 - 关节问题完全解决,导致更高的可靠性。 (c)2020 Elsevier B.v.保留所有权利。

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