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Electrical and structural properties of epitaxially deposited chromium thin films

机译:外延沉积铬薄膜的电气和结构性能

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摘要

We studied the electrical resistance and crystal structure of epitaxial chromium (Cr) films. The lattice constant of the Cr films was larger than that of the bulk Cr because of MgO substrate on which Cr was epitaxially deposited. A chromium oxide layer having a thickness of 1 nm was found on all films from the result of X-ray reflectivity measurements. The electrical resistivity rho(T) shows metallic behavior for all epitaxial Cr films in contrast with polycrystalline one. However, the magnitude of rho tends to increase and the antiferromagnetic interaction is suppressed as decreasing thickness of film. (C) 2017 Elsevier B.V. All rights reserved.
机译:我们研究了外延铬(Cr)薄膜的电阻和晶体结构。 由于在外延沉积CR的MgO基板上,Cr膜的晶格常数大于散装Cr的晶格常数。 在X射线反射率测量结果的所有膜上发现厚度为1nm的氧化铬层。 电阻率rho(t)显示了与多晶一体相比的所有外延Cr膜的金属行为。 然而,rho的大小趋于增加,并且抑制反铁磁相互作用作为薄膜厚度的降低。 (c)2017年Elsevier B.V.保留所有权利。

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