Structural and electrical properties of epitaxial SnO_2: Sb films deposited on 6 H-SiC by MOCVD

摘要

Sb-doped tin oxides (SnO_2:Sb) films had been epitaxially grown on 6 H-SiC by metal organic chemical vapour deposit (MOCVD) technology. The Structural and electrical properties of the films were investigated in detail. The obtained SnO_2:Sb films have a rutile crystal structure with (100) oriented. The SnO_2 with 3 % Sb-doping film had a lowest resistivity of 9.3 × 10~(-4) Ω·cm and a highest carrier concentration of 3.4 × 10~(20) cm~3. The electrical properties of SnO_2:Sb films from room temperature to 10 K with different Sb-doping concentrations were studied well in order to reveal the transport mechanism. Taking the temperature of 150 K as the dividing line, the film were dominated by ion scattering and lattice vibration scattering.