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Tuning of the electrical and thermal properties of SnSb2S4 sulfosalt vacuum evaporated thin films subjected to a heat treatment for thermoelectric application

机译:调整SNSB2S4硫磺式真空蒸发薄膜的电气和热性能进行热处理的热电应用

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摘要

This work covers the results of annealing effect in air on the structural, electrical and thermal properties of SnSb2S4. These films were deposited on unheated glass substrates by vacuum thermal evaporation and then they were subjected to annealing process for one hour in air ambient at 300 degrees C. First, X-ray diffraction analysis revealed that annealed film corresponds to SnSb2S4 material which has polycrystalline nature and the cristallites have the preferential orientation towards 531 direction. Second, the electrical properties have been investigated by means of complex impedance spectroscopy technique in frequency range 40 Hz-10(7) Hz and in temperature range 300 K-540 K. The effect of frequency and temperature on dielectric constant and dielectric loss has been discussed in terms of hopping of charge carriers. Moreover, the activation energy was estimated from both temperature dependence of dc conductivity and relaxation time data. Finally, the electro-pyroelectric method has been recognized as a reliable and useful tool for the measurement of thermal properties of SnSb2S4. Using a new approach based on theoretical models of electro-pyroelectric method, thermal properties of SnSb2S4 have been deduced. Indeed, thermal conductivity of annealed film at 300 degrees C is about 80.4 Wm(-1) K-1. These results may be of interest for thermoelectric application of such ternary material. (C) 2018 Elsevier B.V. All rights reserved.
机译:这项工作涵盖了SNSB2S4的结构,电气和热性能的空气中的退火效果的结果。这些膜通过真空热蒸发沉积在未加热的玻璃基板,然后将它们在300℃下首先,进行退火处理,在空气中室温1小时X射线衍射分析表明,退火的膜对应于已经多晶性质SnSb2S4材料并且基准石具有朝向531方向的优先取向。其次,已经通过频率范围40Hz-10(7)Hz的复杂阻抗谱技术和温度范围300k-540K的频率和温度对介电常数和介电损耗的影响,研究了电性能。已经存在频率和温度对介电常数和介电损耗的影响在跳跃载体的跳跃方面讨论。此外,从DC电导率和弛豫时间数据的温度依赖性估计激活能量。最后,电热电解方法被认为是用于测量SNSB2S4的热性能的可靠和有用的工具。采用基于电热电解方法理论模型的新方法,推导出SNSB2S4的热性能。实际上,300摄氏度的退火膜的导热率约为80.4Wm(-1)k-1。这些结果可能对这种三元材料的热电应用感兴趣。 (c)2018年elestvier b.v.保留所有权利。

著录项

  • 来源
    《Sensors and Actuators, A. Physical》 |2018年第2018期|共9页
  • 作者单位

    IPEIN UR Photothermy Photothermal Lab BP 62 Merazka Nabeul 8000 Tunisia;

    Univ Kairouan Inst Super Sci Appl &

    Technol Kasserine URMAN BP 471 Kasserine 1200 Tunisia;

    Univ Tunis El Manar ENIT Lab Photovoltaique &

    Mat Semicond BP 37 Tunis 1002 Tunisia;

    IPEIN UR Photothermy Photothermal Lab BP 62 Merazka Nabeul 8000 Tunisia;

    Univ Tunis El Manar ENIT Lab Photovoltaique &

    Mat Semicond BP 37 Tunis 1002 Tunisia;

    Univ Gabes Gabes Fac Sci Gabes Lab Phys Mat &

    Nanomat Appl Environm Erriadh City 6079 Tunisia;

    IPEIN UR Photothermy Photothermal Lab BP 62 Merazka Nabeul 8000 Tunisia;

    Univ Tunis El Manar Fac Sci Tunis Unite Phys Dispositifs Semicond Tunis 2092 Tunisia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TP212.1;
  • 关键词

    SnSb2S4; Thin films; Electrical conductivity; Thermal properties;

    机译:SNSB2S4;薄膜;电导率;热性能;

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