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首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >Copper oxide nanocrystallites fabricated by thermal oxidation of pre-sputtered copper films at different temperatures and under oxygen and argon flows
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Copper oxide nanocrystallites fabricated by thermal oxidation of pre-sputtered copper films at different temperatures and under oxygen and argon flows

机译:通过在不同温度和氧气和氩气下由预溅射的铜膜进行预溅射铜膜的热氧化氧化铜纳米晶体

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摘要

Copper oxide nanocrystallites were synthesized from Cu thin films via controlled thermal treatment under O-2 and Ar flows. The nanocrystallites were synthesized at 350, 400 and 500 degrees C. XRD revealed that substoichiometric copper oxides such as Cu4O3 and Cu64O were emerged with Cu and CuO for samples treated at 350 degrees C and 450 degrees C, respectively, whereas single monoclinic CuO was emerged for the samples treated at 500 degrees C. EDAX quantitative analysis confirmed the presence of both Cu and oxygen in the films with slightly excess oxygen for films treated at 400 and 500 degrees C. SEM examinations confirmed the nanocrystallite morphologies for the examined samples and that more coalescent nanocrystallites, with diameters in the range 42-75 nm, were obtained for the samples treated at 500 degrees C. With increasing treatment temperature from 350 to 500 degrees C, the films vary from highly reflecting reddish brown color to highly transparent. The estimated band gap values for the mixed copper oxide phases, samples treated at 450 degrees C, and pure CuO phase were 1.27 eV and 2.00 eV, respectively. High refractive index and moderate extinction coefficient values were calculated for the samples containing mixed phases which may find new application in optoelectronics. The refractive index values for pure CuO were matched with the previously reported values. The samples treated at 350 degrees C had very low resistivity and metallic behavior, whereas a semiconducting behavior was observed for the samples treated at 400 and 500 degrees C. (C) 2017 Elsevier GmbH. All rights reserved.
机译:通过在O-2和AR流下通过控制的热处理通过Cu薄膜合成氧化铜纳米晶体。在350,400和500摄氏度中合成纳米晶体。XRD揭示了诸如Cu 4 O 3和Cu6 40的含量铜氧化物,Cu和CuO分别以350℃和450℃处理的样品,而单体单斜联核被出现对于500摄氏度处理的样品,edax定量分析证实了在400和500℃的薄膜上具有略微过量的氧气的薄膜中Cu和氧的存在。SEM检查证实了所检查样品的纳米晶体形态,更多在42-75nm范围内直径的聚束纳米晶体用于在500℃处理的样品中获得。随着350至500℃的加工温度的增加,薄膜从高度反射到高度透明时变化。混合氧化铜相的估计带隙值,在450℃下处理的样品,纯CuO相分别为1.27eV和2.00eV。计算含有混合相的样品的高折射率和中等消光系数值,其可以在光电子中找到新应用。纯CuO的折射率值与先前报道的值匹配。在350℃处理的样品具有非常低的电阻率和金属行为,而观察到在400和500摄氏度的样品中观察到半导体行为。(c)2017 Elsevier GmbH。版权所有。

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