Comparison studies of excitonic properties and multiphoton absorption of near-infrared-I-emitting Cu-doped InP and InP/ZnSe nanocrystals

摘要

Cu-doped InP (Cu:InP) and InP/ZnSe nanocrystals (NCs) with near-infrared-I (MR-I) emission were prepared and characterized. Femtosecond transient absorption spectra revealed that the epitaxial growth of a ZnSe diffusion barrier onto the Cu:InP core can amplify its exciton-dopant coupling strength, with the energy transfer times of similar to 220 Ps for Cu:InP NCs and similar to 183 ps for Cu:InP/ZnSe NCs. Importantly, the Cu:InP/ZnSe NCs exhibit much larger two- and three-photon absorption cross sections, reaching similar to 10162 GM at 1030 nm and similar to 1.06 x 10(-77) cm(6) s(2) photon(-2) at 1600 nm, compared with Cu:InP NCs. (C) 2020 Optical Society of America