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Investigation on the structural, morphological, electronic and photovoltaic properties of a perovskite thin film by introducing lithium halide

机译:卤化锂通过引入钙钛矿薄膜结构,形态学,电子和光伏特性研究

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摘要

The performance of perovskite solar cells (PSCs) including device efficiency and stability is mainly dependent on the perovskite film properties which are critically related to the organic cations used. Herein, we studied the role that the inorganic lithium (Li) cation played in perovskite thin films and its influence on crystal growth, film properties, and device performance. We found that within the threshold limit of a 1.0% molar ratio, the Li dopant had a positive effect on the film formation and properties. However, after replacing more MA(+) with Li+, the device performance was degraded significantly with reduced short-circuit current density (J(sc)) and fill factor (FF) values. With a doping ratio of 10 mol%, the film morphology, crystallinity, photophysical, and electronic properties totally changed due to the unstable nature of the Li doped, distorted 3-D perovskite structure. The Li doping mechanism was discussed, and it was thought to contain two different doping mechanisms. One is interstitial doping at the much lower doping ratio, and the other is substitutional doping for the MA cation at the higher doping ratio.
机译:包括装置效率和稳定性的钙钛矿太阳能电池(PSC)的性能主要取决于钙钛矿膜性质,其与所用的有机阳离子有关。在此,我们研究了在钙钛矿薄膜中发挥的无机锂(Li)阳离子的作用及其对晶体生长,膜性能和器件性能的影响。我们发现,在1.0%摩尔比的阈值限制内,Li掺杂剂对膜形成和性质具有阳性作用。然而,在用Li +更换更多MA(+)后,器件性能显着降低,随着短路电流密度(J(SC))和填充因子(FF)值而显着降低。掺杂比例为10mol%,薄膜形态,结晶度,光性和电子性质由于Li掺杂的不稳定性,扭曲的3-D钙钛矿结构而完全改变。讨论了Li掺杂机制,并认为含有两种不同的掺杂机制。一种是掺杂比较较低的掺杂比的间质掺杂,另一个是以较高的掺杂比以较高的MA阳离子取代掺杂。

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  • 来源
    《RSC Advances》 |2018年第21期|共7页
  • 作者单位

    Xidian Univ State Key Lab Wide Band Gap Semicond Technol Shaanxi Joint Key Lab Graphene Sch Microelect 2 South Taibai Rd Xian 710071 Shaanxi Peoples R China;

    Natl Univ Singapore Dept Chem 3 Sci Dr 3 Singapore 117543 Singapore;

    Xidian Univ State Key Lab Wide Band Gap Semicond Technol Shaanxi Joint Key Lab Graphene Sch Microelect 2 South Taibai Rd Xian 710071 Shaanxi Peoples R China;

    Xidian Univ State Key Lab Wide Band Gap Semicond Technol Shaanxi Joint Key Lab Graphene Sch Microelect 2 South Taibai Rd Xian 710071 Shaanxi Peoples R China;

    Xidian Univ State Key Lab Wide Band Gap Semicond Technol Shaanxi Joint Key Lab Graphene Sch Microelect 2 South Taibai Rd Xian 710071 Shaanxi Peoples R China;

    Natl Univ Singapore Dept Chem 3 Sci Dr 3 Singapore 117543 Singapore;

    Xidian Univ State Key Lab Wide Band Gap Semicond Technol Shaanxi Joint Key Lab Graphene Sch Microelect 2 South Taibai Rd Xian 710071 Shaanxi Peoples R China;

    Natl Univ Singapore Dept Mat Sci &

    Engn 7 Engn Dr 1 Singapore 117574 Singapore;

    Xidian Univ State Key Lab Wide Band Gap Semicond Technol Shaanxi Joint Key Lab Graphene Sch Microelect 2 South Taibai Rd Xian 710071 Shaanxi Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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