TIN (II) HALIDE-BASED PEROVSKITE FILM, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE AND PHOTOVOLTAIC DEVICE USING SAME

摘要

In an X-ray diffraction chart of a tin (II) halide-based perovskite compound according to the present invention, the intensity ratio of a diffraction peak with the highest intensity corresponding to a tin (IV) compound present within a diffraction angle 2θ range of 10-50^o inclusive to a diffraction peak of plane index (002) corresponding to the tin (II) halide-based perovskite compound is not grater than 10%.