TSV-integrated thermoelectric cooling by holey silicon for hot spot thermal management

摘要

The trends toward higher power, higher frequency, and smaller scale electronics are making heat dissipation ever more challenging. Passive thermal management based on high thermal conductivity materials or through-silicon vias (TSVs) may not provide sufficient cooling for hot spots reaching 1 kW cm(-2), and active thermal management by thermoelectric cooling (TEC) may require large power consumption or suffer from a large off-state thermal resistance of thermoelectric materials. Here we address these issues by integrating a holey silicon-based TEC with a TSV that directly draws heat from a hot spot to combine active and passive cooling approaches. Our simulations of the TSV-integrated TEC demonstrate exceptional cooling performance, which reduces the hot spot temperature from 154 degrees C to 68 degrees C while dissipating a heat flux of 1 k W cm(-2) and consuming 0.5 W for TEC operation. The off-state hot spot temperature, 154 degrees C, is 24 degrees C lower than that of the same TEC with no TSV, and the on-state hot spot temperature, 68 degrees C, is 67 degrees C lower than that of the same TEC with no TSV. We also investigate the cooling prospects of metal-filled holey silicon by modeling the electron-phonon coupling and size dependent transport phenomena, which can further increase the thermal conductivity anisotropy and improve the TEC performance depending on the metal-to-silicon interfacial resistance. These results show the combined passive and active cooling in TSV-integrated TEC offers effective hot spot thermal management solutions for advanced electronics.