Highly linear fundamental up‐converter in InP DHBT technology for W‐band applications

机译：用于W波段应用的INP DHBT技术中高度线性的基础上变频器

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Abstract >A fundamental up‐converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800?nm transferred substrate (TS) InP‐DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100?GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10?±?1 dB within the frequency from 82 to 95?GHz with a saturated output power of ?1 dBm at 86?GHz and 5 dB conversion gain between 75 and 100?GHz. The up‐converter exhibits 25?GHz of IF bandwidth. The DC power consumption is only 51?mW. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译：</span><abstract type =“main”xml：lang =“en”> <标题类型=“main”>抽象</ title> >具有高线性度的基本上加压器，实现了使用800ΩNM转移的基板（TS）INP-DHBT技术的全Gilbert细胞（GC）混合器。 LO输入吉尔伯特电池从75到100？GHz，需要5 dBm的输入功率。 GC在82至95Ω的频率内达到10？±1 dB的单边带（SSB）转换增益，其饱和输出功率为86Ω，GHz和＆ 5 dB转换增益在75之间 100？GHz。 Up-Converter展示了25？GHz的带宽。直流功耗仅为51兆瓦。</ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-24977/'>《Microwave and optical technology letters》</a> <b style="margin: 0 2px;">|</b><span>2020年第7期</span><b style="margin: 0 2px;">|</b><span>共5页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/1165.html" title="光学">光学;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Local oscillator (LO)&option=203" rel="nofollow">Local oscillator (LO);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=indium phosphide double heterojunction bipolar transistor (DHBT)&option=203" rel="nofollow">indium phosphide double heterojunction bipolar transistor (DHBT);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=single sideband (SSB)&option=203" rel="nofollow">single sideband (SSB);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=upper side band (USB)&option=203" rel="nofollow">upper side band (USB);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=lower side band (LSB)&option=203" rel="nofollow">lower side band (LSB);</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=transferred‐substrate (TS) process&option=203" rel="nofollow">transferred‐substrate (TS) process;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Gilbert cell (GC) mixer&option=203" rel="nofollow">Gilbert cell (GC) mixer;</a> </p> <div class="translation"> 机译：本地振荡器（LO）;磷化铟双异质结双极晶体管（DHBT）;单边带（SSB）;上侧带（USB）;下侧带（LSB）;转移 - 基板（TS）工艺;GILBERT细胞（GC）混合器; </div> </li> </ul> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704019949132.html">Highly linear fundamental up‐converter in InP DHBT technology for W‐band applications</a> <b>[J]</b> . <span> <a 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href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=葛霁&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,葛霁</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=程伟&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,程伟</a> <span> <a href="/conference-cn-59554/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 第十五届全国化合物半导体材料、微波器件和光电器件学术会议 </a> <span> <span> . 2008</span> </span> </div> </li> <li> <div> <b>7. </b><a class="enjiyixqcontent" href="/academic-degree-domestic_mphd_thesis/020315028564.html">基于循环放大技术的高灵敏度核酸线性阈值门和NCQDs应用于Fe3+检测的研究</a> <b>[A] </b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=修宝&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 修宝</a> <span> . 2016</span> </span> </div> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06120957874.html">InP DHBT W波段功率放大器单片集成电路的稳定网络结构</a> <b>[P]</b> . <span> 中国专利： CN101989838B </span> <span> . 2012.06.27</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/06120106196315.html">InP DHBT W波段功率放大器单片集成电路的稳定网络结构</a> <b>[P]</b> . <span> 中国专利： CN101989838A </span> <span> . 2011-03-23</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130442546329.html">InP collector InGaAsSb base DHBT device and method of forming same</a> <b>[P]</b> . <span> 外国专利：  US6670653B1 </span> <span> . 2003-12-30</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：InP集电极InGaAsSb基DHBT器件及其形成方法 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130448767340.html">Inp collector ingaassb base dhbt device and method of forming the same</a> <b>[P]</b> . <span> 外国专利：  AU6383000A </span> <span> . 2001-02-19</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：Inp收集器Ingaassb基础dhbt装置及其形成方法 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130448697484.html">INP COLLECTOR INGAASSB BASE DHBT DEVICE AND METHOD OF FORMING THE SAME</a> <b>[P]</b> . <span> 外国专利：  WO0109957A1 </span> <span> . 2001-02-08</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译：基于inp收集器ingasassb的DHBT装置及其形成方法 </span> </p> </li> </ul> </div> </div> </div> <div class="theme cardcommon" style="overflow: auto;display:none"> <h3 class="all_title" id="enpatent55">相关主题</h3> <ul id="subject"> </ul> </div> </div> </div> </div> <div class="right rightcon"> <div class="details_img cardcommon clearfix" style="margin-bottom: 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