首页> 外文期刊>Electrochimica Acta >Achieving on chip micro-supercapacitors based on CrN deposited by bipolar magnetron sputtering at glancing angle
【24h】

Achieving on chip micro-supercapacitors based on CrN deposited by bipolar magnetron sputtering at glancing angle

机译:基于CRN沉积的CRN粘合角度沉积的芯片微型超级电容器

获取原文
获取原文并翻译 | 示例
       

摘要

The enhancement of the surface area and ordering of mesopores is a key parameter to increase the specific capacitance of electrochemical capacitors (ECs). These parameters can improve the electrolyte accessibility to the active material in order to improve its charge storage. In this work, magnetron sputtering at glancing angle (GLAD) is used in order to enhance the porosity of CrN for use as electrode material in ECs. The GLAD technique consists on tilting the substrate according to the deposition flux allowing the formation of well-separated columns due to a ballistic shadowing effect. Four different tilts of 0 degrees, 45 degrees, 60 degrees and 75 degrees were explored. While the CrN films deposited at 0 degrees or 75 degrees do not show any capacitive behaviour, a high areal capacitance is obtained at 45 degrees or 60 degrees (35.4 mF cm(-2) at a current density of 1.2 mA cm(-2) in 0.5 M H2SO4 electrolyte) with a good cycling stability over 10,000 cycles. On chip interdigitated micro-supercapacitors (MSCs) were assembled with a maximum energy density of 2 mu Wh.cm(-2) (15.3 mWh.cm(-3)) at a power density of 20 mu W cm(-2) (0.15 W cm(-3)). The GLAD strategy can be generalised to other materials deposited by physical vapour deposition techniques, for highly porous electrodes, with improved electrochemical energy storage properties. (C) 2019 Elsevier Ltd. All rights reserved.
机译:表面积的增强和中孔的排序是增加电化学电容器(ECS)的比电容的关键参数。这些参数可以改善与活性材料的电解质可访问性,以改善其电荷存储。在这项工作中,磁控溅射在角度(GLAD)是为了提高的CrN的孔隙率以用作在EC中的电极材料中使用掠。高兴的技术包括根据沉积通量倾斜基板,允许由于弹道遮蔽效果而形成良好分离的柱。探讨了0度,45度,60度和75度的四个不同倾斜。而沉积在0度或75度的CrN膜不显示任何电容特性,在45度或60度(35.4厘米μF的(-2)在1.2毫安cm 2的电流密度获得了高的面电容(-2)在0.5米H2SO4电解质中,循环稳定性良好,超过10,000个循环。在芯片中,在电力密度为20μWM(-2)(-2)(-2)(-2)(-2)(-2)(-2)(-2)(-2)(-2)(-2))(-2)(-2)(-2)()的功率密度,将芯片中的微型超级电容器(MSCs)组装在一起,最大能量密度为2μCM(-2)(-2)(-2)( 0.15 W cm(-3))。高度多孔电极的物理气相沉积技术的其他材料可以推广到高度多孔电极,具有改善的电化学能量存储性能。 (c)2019 Elsevier Ltd.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号