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机译:对InGaASP / INP同心双量子环中氢供体杂质结合能的外部电场影响
Qufu Normal Univ Dept Phys Shandong Prov Key Lab Laser Polarizat &
Informat Qufu 273165 Peoples R China;
Qufu Normal Univ Dept Phys Shandong Prov Key Lab Laser Polarizat &
Informat Qufu 273165 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Concentric double quantum rings; binding energy; hydrogenic donor impurity; external electric field;
机译:对InGaASP / INP同心双量子环中氢供体杂质结合能的外部电场影响
机译:GaAs / Ga 1 _xAl_xAs同心双量子环中氢供体杂质的结合能:几何形状,静水压力,温度和铝浓度的影响
机译:电磁场对InGaASP / INP量子环杂质结合能的影响
机译:磁场对圆柱形量子环中氢供体杂质结合能的影响
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:磁场对Ga1-xInxNyAs1-y / GaAs量子阱中浅施主杂质的杂质结合能的影响
机译:静态外场下逆抛物线量子阱中氢杂质态的结合能
机译:非抛物性对量子阱中氢源供体结合能的影响