首页> 外文期刊>Physica, E. Low-dimensional systems & nanostructures >Binding energy of hydrogenic donor impurity in GaAs / Ga 1 _xAl_xAs concentric double quantum rings: Effects of geometry, hydrostatic pressure, temperature, and aluminum concentration
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Binding energy of hydrogenic donor impurity in GaAs / Ga 1 _xAl_xAs concentric double quantum rings: Effects of geometry, hydrostatic pressure, temperature, and aluminum concentration

机译:GaAs / Ga 1 _xAl_xAs同心双量子环中氢供体杂质的结合能:几何形状,静水压力,温度和铝浓度的影响

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We consider the effects of hydrostatic pressure, temperature, aluminum concentration and impurity position on hydrogen-like donor binding energy in GaAs/Ga1_xAl_xAs concentric double quantum rings. The ground state energy and the impurity wave function are calculated using the variational method. For the hydrostatic pressure effects the Γ-X crossover has been taken into account. The probability density of electron without electron-impurity interaction have been investigated for different values of the sizes of the structure. The dependencies of the binding energy on geometry of the structure, hydrostatic pressure, temperature, aluminum concentration and impurity positions have been also investigated. The results show that the binding energy is an increasing (decreasing) function of the hydrostatic pressure and aluminum concentration (temperature). Additionally we have found that when the impurity is placed within the inner ring, the binding energy behavior strongly depends on the widths of the outer ring and coupling barrier.
机译:我们考虑了静水压力,温度,铝浓度和杂质位置对GaAs / Ga1_xAl_xAs同心双量子环中类氢供体结合能的影响。使用变分法计算基态能量和杂质波函数。对于静水压力效应,已考虑了Γ-X交叉。对于结构尺寸的不同值,已经研究了没有电子与杂质相互作用的电子的概率密度。还研究了结合能对结构几何形状,静水压力,温度,铝浓度和杂质位置的依赖性。结果表明,结合能是静水压力和铝浓度(温度)的增加(减小)函数。此外,我们发现,当将杂质置于内环中时,结合能的行为在很大程度上取决于外环和耦合势垒的宽度。

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