Structural analysis of SiC Schottky diodes failure mechanism under current overload

摘要

1.2 kV-10A tungsten Schottky diodes (W-SBD) have been aged and tested at limit under current overload (surge current pulses) to determine their structural weakest spots. All devices showed no ageing at 40A amplitudes and a surge current capability higher than 60 A. Infrared lock-in measurements have located the weakest spots on the surface of failed chips and allowed us to non-invasively infer their origin: Schottky barrier modification by metal contact change. After, a focused ion beam coupled with scanning electron microscope has been used to analyse the physical signature at these locations. These inspections have revealed that the destruction mechanism responsible for their failure was the electromigration and thermomigration of tungsten into aluminum, locally modifying the electrical behaviour of the Schottky barrier (loss of blocking capability).