Semiconducting product has Schottky contact and edge region connected to component structure that holds overload current corresponding to defined step current within Schottky contact

摘要

The device has a semiconducting body (1) doped with a first conductivity type with an applied Schottky contact layer (2) laterally enclosed by an edge region (3) doped with a second conductivity type and forming a Schottky contact (4) with the body. The Schottky contact and the edge region are also connected to a component structure (3,5,6) that holds an overload current corresp. to a defined step current within the Schottky contact.