Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method

摘要

The electronic band structure and optical gain of an InAs/GaSb/InSb short-period superlattice laser diode on a GaSb substrate are numerically investigated with an accurate 8 × 8 k.p model. Using a realistic graded and asymmetric interface profile, we obtain a reasonable agreement on band gap energy with our experimental data extracted from laser emissions performed on the laser diode. The optical performance in terms of optical gain is then calculated for the laser structure and we demonstrate the utility of interface design to model short-period superlattice structures.