II-VI laser diodes with short-period strained-layer superlattice quantum wells
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机译:具有短应变层超晶格量子阱的II-VI激光二极管
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摘要
A laser diode for emitting a coherent beam of light in the blue and/or green portions of the spectrum. The laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first light-guiding layer. A short-period strained- layer superlattice (SPSLS) CdZnSe quantum well active layer is positioned within the pn junction. The layers of II-VI semiconductor are supported by a substrate. First and second electrodes on opposite sides of the layers of II-VI semiconductor couple electrical energy to the laser diode.
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