Interfaces As Design Tools For The Inas/gasb/insb Short-period Superlattice For Mid-infrared Emission

摘要

We use a standard 8×8 envelope-function approximation (EFA) formalism taking into account the effect of anisotropic and other interface (IF) interactions to investigate the electronic and optical properties of short-period superlattice laser structures (InAs/GaSb/InSb)×N grown on a GaSb substrate. We find that the band gaps numerically calculated at different temperatures give a good fitting with the experimental data confirming the model used. The calculated modal gain demonstrates that it is possible to achieve lasing operation at room temperature for N > 12 and for a reasonable total optical loss a, = 25 cm~(-1). Therefore, the 8×8 EFA formalism with IF design serves as a tool to model the optoelectronic properties of InAs/GaSb/InSb SPSLs.