Preparation of Ge-S-I and Ge-Sb-S-I glasses by plasma-enhanced chemical vapor deposition

摘要

The glass samples of Ge-S-I and Ge-Sb-S-I systems were synthesized by the plasma-enhanced chemical vapor deposition (PECVD) in a low-temperature non-equilibrium RF-plasma discharge. The vapors of GeI4, SbI3 and S were the initial substances. The process was carried out in the flowing quartz reactor at the walls temperature of 350-400 degrees C and the constant total pressure of 1.9 Torr. The glasses obtained by melting of the solid reaction products were homogenized in the evacuated quartz glass ampoule and they were studied by DSC, X-ray microanalysis, Raman spectroscopy, FTIR and atomic emission spectroscopy. (C) 2015 Elsevier B.V. All rights reserved.