Preparation of chalcogenide glasses via plasma-enhanced chemical vapor deposition on the example of As-S system

摘要

Bulk samples of As-S chalcogenide glasses were prepared by interaction of vapors of volatile precursors in low-temperature non-equilibrium plasma discharge (PECVD process). The PECVD synthesis was carried out in the flowing quartz reactor at the walls temperature about 250 °C. Elemental As and S were used as the initial substances. In order to compare, the As-S bulk samples were synthesized by “traditional” melting of the initial substances into evacuated quartz ampoule from the same precursors. The optical properties of the bulk samples were compared. The exhausted gas mixtures were analyzed to clarify the difference in the carbon impurities content.