Phase change material W_(0.04)(Sb_4Te)_(0.96) for application in high-speed phase change memory

摘要

W-doped Sb_4Te is proposed for high-speed phase change memory (PCM). The crystallization speed of W_(0.04)(Sb_4Te)_(0.96) is characterized in both the film and device, confirmed to be ~30 ns and 6 ns. The crystallization temperature and data retention have been increased to 192 and 112 °C. The melting point is 550 °C, ~75 °C lower than that of GST. The grain size is controlled to be 30-50 nm, lowering the stress and improving the cycling ability. The small grains, good thermal stability, high crystallization speed and low melting temperature have made the W_(0.04)(Sb_4Te)_(0.96) a potential candidate for high-speed PCM application.