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Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application Thereof
Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application Thereof
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机译:用于相变存储器的富含锑的高速相变材料,制备方法及其应用
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摘要
The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used in a phase-change memory (PCRAM), a preparing method and an application thereof. The antimony-rich high-speed phase-change material used in a PCRAM has a chemical formula being Ax(Sb2Te)1−x, x is an atom percent, where A is selected from W, Ti, Ta, and Mn, and 0x0.5 The phase-change material provided in the present invention is similar to a usual GeSbTe material, so as to be propitious to implement high-density storage. The material may perform reversible phase-change under an effect of an externally electrically driven nano-second (ns) pulse. A phase-change speed of the W—Sb—Te is 3 times of the GeSbTe material, so as to be propitious to implement the high-speed PCRAM.
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机译:本发明涉及微电子技术领域中掺杂金属元素的相变材料,尤其涉及一种用于相变存储器(PCRAM)的富锑高速相变材料,制备方法和材料。其应用。用于PCRAM的富含锑的高速相变材料的化学分子式为A x Sub>(Sb 2 Sub> Te) 1-x Sub >,x是原子百分比,其中A选自W,Ti,Ta和Mn,且0 <x <0.5。本发明提供的相变材料类似于通常的GeSbTe材料,因此为有利于实现高密度存储。该材料可以在外部电驱动的纳秒(ns)脉冲的作用下执行可逆的相变。 W-Sb-Te的相变速度是GeSbTe材料的3倍,有利于实现高速PCRAM。
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