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首页> 外文期刊>Surface & Coatings Technology >Zinc oxide (ZnO) grown on flexible substrate using dual-plasma-enhanced metalorganic vapor deposition (DPEMOCVD)
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Zinc oxide (ZnO) grown on flexible substrate using dual-plasma-enhanced metalorganic vapor deposition (DPEMOCVD)

机译:使用双等离子体增强金属有机气相沉积(DPEMOCVD)在柔性基板上生长的氧化锌(ZnO)

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This study investigates the temperature dependence of zinc oxide (ZnO) grown on polyestersulfone (PES) flexible substrates using the dual plasma-enhanced metal-organic chemical vapor deposition (DPEMOCVD) system. The proposed method uses a direct voltage (DC) and radio-frequency (RF) plasma system. The group-VI precursor, oxygen (O _2), can be completely ionized by the DC plasma system. The effect of optimal DC plasma power on ZnO thin films is thoroughly investigated using X-ray diffraction (XRD). The experimental results indicate that the crystalline structure and optical and electrical properties of ZnO thin films grown on PES substrates are dependent on the deposition temperature. The optimum deposition temperature for ZnO thin films deposited on PES substrates is 185°C, whereas the DC and RF plasma power is 1.8W and 350W, respectively. Additionally, the wettability characteristic regarding the UV irradiation time was assessed by measuring the water contact angle. Under the UV irradiation for 60min, the ZnO film grown at 185°C represents a low contact angle of 5°, which approaches to a superhydrophilic surface.
机译:这项研究调查了使用双等离子体增强金属有机化学气相沉积(DPEMOCVD)系统在聚酯砜(PES)柔性基板上生长的氧化锌(ZnO)的温度依赖性。所提出的方法使用直流电压(DC)和射频(RF)等离子体系统。第六族前体氧(O _2)可以被直流等离子体系统完全电离。使用X射线衍射(XRD)彻底研究了最佳直流等离子体功率对ZnO薄膜的影响。实验结果表明,在PES衬底上生长的ZnO薄膜的晶体结构,光学和电学性质取决于沉积温度。在PES衬底上沉积的ZnO薄膜的最佳沉积温度为185°C,而DC和RF等离子功率分别为1.8W和350W。另外,通过测量水接触角来评估关于UV照射时间的润湿性特性。在60分钟的紫外线照射下,在185°C下生长的ZnO膜表示5°的低接触角,接近超亲水表面。

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