...
首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Reply to the Comment on 'Photoluminescence Study of the Introduction of V in Si-MCM-41: Role of Surface Defects and Their Associated SiO- and SiOH Groups'
【24h】

Reply to the Comment on 'Photoluminescence Study of the Introduction of V in Si-MCM-41: Role of Surface Defects and Their Associated SiO- and SiOH Groups'

机译:对“ Si-MCM-41中V的引入的光致发光研究:表面缺陷及其相关的SiO-和SiOH基团的作用”的评论答复

获取原文
获取原文并翻译 | 示例

摘要

We have read Stiegman's comment1 on our paper.2 His main points of contention concern (1) the assignment of the vibrational transition of the C_(3v) pseudotetrahedral V species present in V-substituted mesoporous sieves (V-MCM-41) to the terminal V=O stretch and (2) the assignment of the emission bands at 420-620 nm to surface defects associated with SiO~- and/or SiOH groups.
机译:我们已在论文上阅读了斯蒂格曼的评论1。2他的主要争论点是(1)将V取代的介孔筛(V-MCM-41)中存在的C_(3v)假四面体V物种的振动跃迁分配给端V = O展宽和(2)将420-620nm的发射带分配给与SiO 2和/或SiOH基团相关的表面缺陷。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号