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Temperature-dependent angle-resolved photoemission study for quantum-well states in Ag nanofilms

机译:Ag纳米薄膜中量子阱态的温度依赖性角度分辨光发射研究

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We have performed a temperature-dependent photoemission study for quantum-well states in Ag(III) nanofilms grown on Cu(111) substrate. It is found that the linewidths of both quantum-well state and surface state broaden and their intensities decrease with increasing a temperature from 40 to 350 K. The linear temperature dependence of the linewidths of both states are explained as the temperature dependence of the phonon contribution to the photohole lifetime width, expressed as 2 pi lambda k(B)T, It is found that the electron-phonon mass-enhancement parameter lambda for quantum-well states is almost the same with that for surface state and an average over the bulk Fermi surface, The temperature dependence of the intensities have been discussed using the standard Debye-Waller factors. It is found that the effective Debye temperature derived from the quantum-well state is higher than that from the surface state, suggesting different properties of phonon states coupled to each electronic state. [References: 19]
机译:我们已经对在Cu(111)衬底上生长的Ag(III)纳米膜中的量子阱态进行了依赖温度的光发射研究。发现随着温度从40 K增加到350 K,量子阱态和表面态的线宽都变宽,并且强度降低。两种状态的线宽的线性温度依赖性被解释为声子贡献的温度依赖性。到光孔寿命宽度,表示为2 pi lambda k(B)T,发现量子阱态的电子声子质量增强参数lambda与表面态几乎相同,并且是整个体的平均值费米表面,强度的温度依赖性已使用标准Debye-Waller因子进行了讨论。发现从量子阱状态导出的有效德拜温度高于从表面态获得的德拜温度,这表明与每个电子态耦合的声子态具有不同的特性。 [参考:19]

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