首页> 外文期刊>Physica, C. Superconductivity and its applications >Pseudogap phase boundary in overdoped Bi_2Sr_2CaCu _2O_(8+δ) studied by measuring out-of-plane resistivity under the magnetic fields
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Pseudogap phase boundary in overdoped Bi_2Sr_2CaCu _2O_(8+δ) studied by measuring out-of-plane resistivity under the magnetic fields

机译:通过在磁场下测量面外电阻率研究过掺杂的Bi_2Sr_2CaCu _2O_(8 +δ)中的Pseudogap相界

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摘要

In order to elucidate the relationship between the pseudogap and high-T_c superconductivity, the characteristic pseudogap temperature T in Bi_2Sr_2CaCu_2O_(8+δ) system has been systematically evaluated as a function of doping, especially focusing on its overdoped region, by measuring the out-of-plane resistivity ρc. Overdoped samples have been prepared by annealing TSFZ-grown Bi_2Sr_2CaCu_2O_(8+δ) single crystals under the high oxygen pressures (990 kgf/cm~2). At a zero field, the ρ_c showed a metallic behavior down to T _c(=62K), while under the magnetic fields of over 3 T, ρc showed typical upturn behavior from around 65 K upon decreasing temperature. This result suggests that the pseudogap and superconductivity are different phenomena.
机译:为了阐明伪间隙和高T_c超导性之间的关系,通过测量掺杂量,系统地评估了Bi_2Sr_2CaCu_2O_(8 +δ)体系中的特征伪间隙温度T作为掺杂的函数,尤其关注其超掺杂区域。面电阻率ρc。通过在高氧气压力(990 kgf / cm〜2)下退火TSFZ生长的Bi_2Sr_2CaCu_2O_(8 +δ)单晶制备了超掺杂样品。在零磁场下,ρ_c表现出低至T _c(= 62K)的金属行为,而在超过3 T的磁场下,随着温度降低,ρc表现出典型的上扬行为,从65 K左右开始。这个结果表明伪间隙和超导是不同的现象。

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