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Pseudogap in Pb-doped Bi2201 Studied by the Out-of-Plane Resistivity in Magnetic Fields up to 40 T

机译:PB掺杂BI2201中的PseudoGAP在磁场中的面外电阻率研究,高达40吨

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We determine the onset temperature of the pseudogap corresponding to the precursor of the superconductivity by measuring the out-of-plane resistivity (rho)_(c) of Bi_(1.74)Pb_(0.38)Sr_(1.88)CuO_(6+delta) in magnetic fields up to 40 T. It has been found that the semiconducting upturn of (rho)_(c)(T) below T~(*) is suppressed by the application of magnetic fields up to 40 T at low temperatures below T~(**) which is lower than T~(*). That is, with decreasing temperature, the magnetic-field insensitive pseudogap is formed below T~(*), and then the magnetic-field sensitive one participates below T~(**). These results have confirmed that the pseudogap corresponding to the precursor of the superconductivity is formed below T~(**).
机译:我们通过测量Bi_(1.74)PB_(0.38)SR_(1.88)CUO_(6 + DELTA)的平面外电阻率(RHO)_(C)来确定与超导性的前体对应于超导性的前兆的开始温度在高达40t的磁场中发现,通过在低于t的低温下施加高达40t的磁场,抑制了低于T〜(*)的半导体的(rho)_(c)(t)的半导体上翘〜(**)低于t〜(*)。也就是说,随着温度的降低,磁场不敏感伪影像形成在t〜(*)下方,然后磁场敏感性人员参与以下参与T〜(**)。这些结果证实,对应于超导性前体的假焦形,下面形成下面的T〜(**)。

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