Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

摘要

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E_C - 0.33 eV, E_C - 0.36 eV, E_C - 0.38 eV and E_C - 0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E _C - 0.58 eV. Isochronal annealing of the passivated material between 50 and 300 °C, revealed the emergence of a secondary defect, not previously observed, at E_C - 0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 °C, as all the defects originally observed in the reference sample were recovered.