Characterization of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon using deep-level transient spectroscopy

摘要

With deep-level transient spectroscopy (DLTS), we have characterized the transformation behavior of a metastable defect labeled EM3 (E_c-0.55 eV) observed in oxygen-rich n-type silicon implanted with hydrogen ions at 88 K and subsequently heated to room temperature. The isothermal annealing experiments of the transformation reveals that EM3 disappears with the activation energy of 0.81 eV under zero bias. The filling pulse dependence of DLTS peak heights shows that EM3 appears with the activation energy of 0.55 eV under zero bias. Although EM3 appears with cooling under reverse bias, it is ascribed to the transformation by the application of filling pulses during temperature-scan DLTS from the state which is formed with the activation energy of 0.80 eV under reverse bias.