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CONPARISON OF NEUTRON AND 2 MEV ELECTRON DAMAGE IN N-TYPE SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

机译：利用深能级瞬态光谱研究N型硅中子和2 mEV电子损伤的比较

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Yutaka Tokuda; Akira Usami;
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年度 2015
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1. Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy [J] . Choi KJ., Jang HW., Lee JL. Physica status solidi, B. Basic research . 2002,第3期

机译：使用深层瞬态光谱和同步加速器辐射光发射光谱表征n型GaN上的电感耦合等离子体损伤
2. The Broad Midgap Deep-Level Transient Spectroscopy Band in Proton (65 MeV) and Fast Neutron-Irradiated n-GaAs [J] . V. N. Brudnyi, A. V. Gradoboev, V. V. Peshev Physica status solidi, B. Basic research . 1999,第2期

机译：质子（65 MeV）和快速中子辐照n-GaAs的宽中间能隙深层瞬态光谱带
3. Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies [J] . Mohammad A. Mannan, Khai V. Nguyen, Rahmi O. Pak, IEEE Transactions on Nuclear Science . 2016,第2期

机译：深层瞬态光谱和等时退火研究研究n型4H-碳化硅外延层的深层
4. A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS) [C] . Cloud Nyamhere, F.D. Auret, A.G.M. Das, International Conference on Defects in Semiconductors; 20070722-27; Albuquerque,NM(US) . 2007

机译：深层瞬态光谱法研究电子诱导缺陷对n型锗掺杂杂质密度的依赖性
5. Chemical sensor using single crystal diamond plates interrogated with Charge-Based Deep-Level Transient Spectroscopy based on the Quantum Fingerprint™ model: Instrumentation and methodology [D] . Montenegro, Daniel Enrique 2011

机译：化学传感器，使用基于Quantum Fingerprint™模型的单晶金刚石板与基于电荷的深层瞬态光谱法进行查询：仪器和方法
6. BIOLOGICAL DAMAGE IN DEVELOPING GERM CELLS OF DROSOPHILA VIRILIS IN OXYGEN AND NITROGEN WITH 14-MEV NEUTRONS [O] . Mary L. Alexander 1958

机译：14-MEV中子在氧和氮中发展果蝇病毒的生殖细胞的生物学损伤
7. Deep-level transient spectroscopy measurements of majority carrier traps in neutron-irradiated n-type silicon detectors [O] . Borchi, E, Bertrand, C, Leroy, C, 1989

机译：中子辐照n型硅探测器中多数载流子陷阱的深层瞬态光谱测量

CONPARISON OF NEUTRON AND 2 MEV ELECTRON DAMAGE IN N-TYPE SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

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