首页> 外文期刊>Physica, B. Condensed Matter >Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi:Changes in atomic structures of defects due to n→p conversion
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Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi:Changes in atomic structures of defects due to n→p conversion

机译:掺P,As,Sb和Bi的γ射线辐照的Ge的正电子探测:由于n→p转换导致的缺陷原子结构的变化

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摘要

The emission of the high-momentum annihilation radiation from the subvalent ion core shells and electron density around a positron localized at a vacancy-group-V-impurity atom complexes produced in oxygen-lean Ge doped with P, As, Sb, and Bi by irradiation with ~(60)Co gamma-rays at room temperature have been investigated with the help of the angular correlation of annihilation radiation (ACAR) before and after n-p conversion. The probability of positron annihilation in the subvalent shells of atoms incorporated in dominant radiation centers was found to be dependent on the ratio of the ion core radii r_i(P~(5+), As~(5+))/r_i(Ge~(4+))<1 and r_i(Sb~(5+), Bi~(5+))/r_i(Ge~(4+))>1, respectively. In passing from P to As impurity atoms the activation energy DEe of electron emission to be detected by DLTS measurements is increased by ~(+0.017 eV) vs. the increase of the electron density parameter to be reconstructed by ACAR data, Δr'_s=r'_s(As)-r'_s(P)≈0.029 a.u. On the contrary, in passing from Sb to Bi impurity atoms, DEe value is decreased by≈(-0.028 eV) whereas the electron density parameter rises by Δr's=r'_s(Bi)-r'_s(Sb)≈0.04 a.u. After n-p conversion a marked decrease in both the electron density and the number of ion cores around the positron points to the fact that the radiation-produced complexes with group-V-impurity atoms (P, As, Sb, Bi) are of a multi-vacancy character. The deep acceptor states in the forbidden gap (E_v+0.1), (E_v+0.12), (E_v+0.16) eV to be attributed to the P-, As-, Sb-,and Bi-containing multi-vacancy centers, respectively, were found to contribute to lessening the electron density around the trapped positron. It is argued that a close similarity of the As~(5+) and Ge~(4+) ion cores results in a small (but marked) augmentation in the electron density around the positron in As-containing multi-vacancy centers after n→p conversion. A trend for inward relaxation of the ion cores is observed in all radiation-produced centers studied.
机译:亚价离子核壳的高动量an灭辐射的发射和正电子周围的电子密度位于由P,As,Sb和Bi掺杂的贫氧Ge中产生的空位-V-杂质原子配合物中借助于n灭辐射(np转换)前后的an灭辐射(ACAR)的角度关系,研究了室温下〜(60)Coγ射线的辐照。发现在主要辐射中心掺入的原子的亚价壳中正电子hil没的可能性取决于离子核半径r_i(P〜(5+),As〜(5 +))/ r_i(Ge〜 (4 +))<1和r_i(Sb〜(5+),Bi〜(5 +))/ r_i(Ge〜(4 +))> 1。从P到As杂质原子传递时,通过DLTS测量检测到的电子发射的活化能DEe增加了约(+0.017 eV),而通过ACAR数据重建的电子密度参数的增加是Δr'_s= r'_s(As)-r'_s(P)≈0.029au相反,从Sb到Bi杂质原子,DEe值降低≈(-0.028 eV),而电子密度参数升高Δr's = r'_s(Bi)-r'_s(Sb)≈0.04a.u。经过np转换后,电子密度和正电子周围离子核数均显着下降,这表明存在辐射产生的带有V族杂质原子(P,As,Sb,Bi)的复合物-空缺字符。深度受体状态在禁带(E_v + 0.1),(E_v + 0.12),(E_v + 0.16)eV中分别归因于含P,As,Sb和Bi的多空位中心被发现有助于降低被俘获的正电子周围的电子密度。认为As〜(5+)和Ge〜(4+)离子核的紧密相似性导致n后含As的多空位中心中正电子周围的电子密度小(但显着)增加→p转换。在研究的所有辐​​射产生中心均观察到离子核向内松弛的趋势。

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