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Thin film CdSe/CuSe photovoltaic on a flexible single walled carbon nanotube substrate

机译:柔性单壁碳纳米管基板上的CdSe / CuSe薄膜光伏

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Liquid phase deposition (LPD), using CdSO4 and N,N-dimethyl selenourea, has been used to grow CdSe absorber layer onto single walled carbon nanotube (SWNT) derived back contact substrates. The nanotubes are imbedded in, and penetrate into, the CdSe absorber layer for the goal of enhancing excition dissociation and carrier transport. The Cd : Se film stoichiometry varied between 1 : 1.7 to 1 : 1.3 depending on the deposition conditions. The CdSe/SWNT layers show appropriate photoresponse. LPD was also used to grow a CuSe window layer onto which silver contacts were deposited. The resulting PV device shows a characteristic IV curve. Despite both the open circuit voltage (V_(oc) = 1.28 mV) and short circuit current (/_(Sc) = 4.85 μA) being low, the resulting device is suggestive of the possibility of fabricating a flexible thin film (inorganic) solar cell by solution processes.
机译:使用CdSO4和N,N-二甲基硒脲的液相沉积(LPD)已用于在单壁碳纳米管(SWNT)衍生的背接触基板上生长CdSe吸收层。纳米管嵌入并渗透到CdSe吸收层中,目的是增强离子解离和载流子传输。根据沉积条件,Cd:Se膜的化学计量比在1:1.7至1:1.3之间变化。 CdSe / SWNT层显示适当的光响应。 LPD还用于生长在其上沉积银触点的CuSe窗口层。所得的PV器件显示出特征IV曲线。尽管开路电压(V_(oc)= 1.28 mV)和短路电流(/ _(Sc)= 4.85μA)都很低,但最终的器件仍暗示着有可能制造柔性薄膜(无机)太阳能电池逐个解决方案的过程

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