Heterojunction photovoltaic devices utilizing single wall carbon nanotube thin films and silicon substrates

摘要

In this work, we demonstrate heterojunction photovoltaic devices utilizing transparent and conducting single wall carbon nanotube (SWNT) thin films as the p-layer on n-type crystalline silicon substrate. The best device shows a short circuit current of 2.74 mA/cm² with an open circuit voltage of 0.4V (AM 1.5). In addition, the concept of applying SWNT film to a thin-film amorphous Si solar cell is also demonstrated. SWNT thin films can be applied via simple solution based methods. SWNT/Si heterojunction devices have remained stable under laboratory conditions for months so far.