Preparation and characterization of single crystalline anatase TiO2 epitaxial films on LaAlO3(001) substrates by metal organic chemical vapor deposition

摘要

Anatase phase TiO2 (a-TiO2) films have been fabricated on LaAlO3(001) substrates at the substrate temperatures of 500 to 650 degrees C by the metal organic chemical vapor deposition (MOCVD) method using tetralds-dimethylamino titanium (TDMAT) as the organometallic (OM) source. The structural studies revealed that the TiO2 film prepared at 600 degrees C had the best single crystalline quality with no twins. The out-of-plane and in-plane epitaxial relationships of the films were a-TiO2(004)parallel to LaAlO3(001) and TiO2[100]parallel to LaAlO3[100], respectively. The optical band gap of the films ranged from 3.30 to 3.37 eV. The morphology and composition of the TiO2 films have also been studied in detail. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.