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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Uniform Patterning of Sub-50-nm-Scale Au Nanostructures on Insulating Solid Substrate via Dip-Pen Nanolithography
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Uniform Patterning of Sub-50-nm-Scale Au Nanostructures on Insulating Solid Substrate via Dip-Pen Nanolithography

机译:通过浸渍笔纳米光刻技术在绝缘固体衬底上均匀形成亚50纳米尺度金纳米结构的图案。

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摘要

We report a direct deposition strategy for sub-50-nm-scale uniform Au patterns on virtually any general insulating substrate via dip-pen nanolithography (DPN). In that process, HAuCl4 molecules were deposited onto bare insulating substrates via a molecular diffusion process, in the absence of electrochemical reactions. Subsequently, the generated HAuCl4 molecular patterns were decomposed to leave Au-only patterns using a thermal annealing process. Uniform Au patterns with a mean diameter of 47.9 ( 3.1 nm were achieved after the annealing process. The strategy allowed us to generate Au patterns on virtually any general insulating substrate (e.g., SiO2, Al2O3, polyimide, etc) without the need for surface functionalization or additional electrode structures. This versatile and reliable patterning method is expected to be useful in the future development of various novel industrial applications (e.g., mask or nanocircuit repair, nanosensors, etc.).
机译:我们报告了通过浸笔式纳米光刻(DPN)在几乎任何普通绝缘基板上实现亚50纳米级均匀金图案的直接沉积策略。在该过程中,在没有电化学反应的情况下,通过分子扩散过程将HAuCl4分子沉积到裸露的绝缘基板上。随后,使用热退火工艺将生成的HAuCl4分子图案分解为仅Au的图案。退火过程后,获得了平均直径为47.9(3.1 nm)的均匀Au图案,该策略使我们能够在几乎任何常规绝缘基板(例如SiO2,Al2O3,聚酰亚胺等)上生成Au图案,而无需进行表面功能化这种通用且可靠的构图方法有望在各种新型工业应用(例如,掩模或纳米电路修复,纳米传感器等)的未来发展中使用。

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