Resistive Switching Memory Devices Composed of Binary Transition MetalOxides Using Sol—Gel Chemistry

摘要

We describe a novel and versatile approach for preparing resistive switching memory devices based on binarytransition metal oxides (TMOs). Titanium isopropoxide (TIPP) was spin-coated onto platinum (Pt)-coated siliconsubstrates using a sol-gel process. The sol-gel-derived layer was converted into a TiO_2film by thermal annealing. A topelectrode (Ag electrode) was then coated onto the TiO_2films to complete device fabrication. When an external bias wasapplied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) wasobserved at low operating voltages (about 0.6 V_(RESET)and 1.4 V_(SET)). In addition, it was confirmed that the electricalproperties (i.e., retention time, cycling test and switching speed) of the sol-gel-derived devices were comparable to thoseof vacuum deposited devices. This approach can be extended to a variety of binary TMOs such as niobium oxides. Thereported approach offers new opportunities for preparing the binary TMO-based resistive switching memory devicesallowing a facile solution processing.