Design and synthesis of amorphous SiOx structures generated by Sn quantum dots: growth mechanism and luminescent origin

摘要

SiOx structures with different diameters of a few hundreds of nanometers and/or a few micrometers are prepared using applied thermal evaporation. Subsequently, Sn quantum dotbased SiOx architectures are synthesized via the continuous steps of the carbothermal reduction of SnO2, substitution of Sn4+ for In3+, thermal oxidation of Si, Sn sublimation, interfacial reaction, and diffusion reaction consistent with corresponding phase equilibriums. Several crystalline and spherical-shaped Sn quantum dots with diameters between 2 and 7 nm are observed in the amorphous SiOx structures. The morphological evolution, including hollow Sn (or SnOx) sphere and wire-like, worm-like, tube-like, and flower-like SiOx, occurs stepwise on the Si substrate upon increasing the given process energies. The optical characteristics based on confocal measurements reveal the as-synthesized SiOx structures, irrespective of whether crystallinity is formed, which all have visible-range emissions originating from the numerous different-sized and -shaped Sn quantum dots permeating into the SiOx matrix. In addition, photoluminescence emissions ranging between ultraviolet and red regions are in agreement with confocal measurements. The origins of the morphology-and luminescence-controlled amorphous SiOx with Sn quantum dots are also discussed.