SYNTHESIS METHOD OF QUANTUM DOT WITH MINIMIZED LATTICE BOUNDARY DEFECT BY CONTINUOUS CRYSTAL GROWTH AND QUANTUM DOT AT THE SAME

摘要

The present invention relates to a method to compose a quantum dot having a continuous crystal growth structure with minimized crystal boundary defect, and a quantum dot manufactured thereby. To this end, the method comprises: (a) a step of mixing at least one selected among zinc (Zn), cadmium (Cd), hydrargyrum (Hg), indium (In), copper (Cu), and lead (Pb) with unsaturated fatty acid, and adding an organic solvent to the mixture so as to synthesize a cation precursor; (b) a step of mixing at least one among selenium (Se), sulfur (S), phosphorus (P), and tellurium (Te) with any one series group selected from alkylphosphine series, alkylphosphine oxide series and trialkylphosphine series to synthesize an anionic precursor; (c) a step of adding at least one selected among magnesium (Mg), lithium (Li), silicon (Si), titanium (Ti), and aluminium (Al) as a metallic or an oxide doping material with the organic solvent in the step (a); and (d) a step of replacing a surface of a quantum dot with a halogen element unit.